5秒后页面跳转
BYV1060 PDF预览

BYV1060

更新时间: 2024-01-07 01:19:24
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 小信号肖特基二极管
页数 文件大小 规格书
4页 84K
描述
SMALL SIGNAL SCHOTTKY DIODE

BYV1060 数据手册

 浏览型号BYV1060的Datasheet PDF文件第2页浏览型号BYV1060的Datasheet PDF文件第3页浏览型号BYV1060的Datasheet PDF文件第4页 
BYV 10-60  
®
SMALL SIGNAL SCHOTTKY DIODE  
DESCRIPTION  
Metal to silicon rectifier diode in glass case featu-  
ring very low forward voltage drop and fastrecovery  
time, intended for low voltage switching mode  
power supply, polarity protection and high fre-  
quency circuits.  
DO 41  
(Glass)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
VRRM  
IF(AV)  
Parameter  
Repetitive Peak Reverse Voltage  
Value  
60  
Unit  
V
Average Forward Current*  
1
A
Tamb = 25 C  
°
IFSM  
Surge non Repetitive Forward Current  
20  
A
Tamb = 25 C  
°
Sinusoidal Pulse  
tp = 10ms  
Tamb = 25 C  
40  
°
Rectangular Pulse  
t = 300 s  
µ
p
Tstg  
Tj  
Storage and Junction Temperature Range  
- 65 to + 150  
- 65 to + 125  
C
°
C
°
TL  
Maximum Lead Temperature for Soldering during 10s at 4mm  
from Case  
230  
C
°
THERMAL RESISTANCE  
Symbol  
Test Conditions  
Value  
Unit  
C/W  
Rth(j-a)  
Junction-ambient*  
110  
°
* On infinite heatsink with 4mm lead length  
August 1999 Ed: 1A  
1/4  

与BYV1060相关器件

型号 品牌 获取价格 描述 数据表
BYV10-60 STMICROELECTRONICS

获取价格

SMALL SIGNAL SCHOTTKY DIODE
BYV10-600P NXP

获取价格

Ultrafast power diode
BYV10-600P WEEN

获取价格

Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
BYV10-600P,127 NXP

获取价格

Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, TO-220AC
BYV10-60B2 STMICROELECTRONICS

获取价格

1A, 60V, SILICON, SIGNAL DIODE
BYV10D-600P WEEN

获取价格

Ultrafast power diode in TO252 (DPAK) plastic package.
BYV10ED-600P WEEN

获取价格

Ultrafast power diode
BYV10EX-600P WEEN

获取价格

Ultrafast power diode
BYV10M-600P WEEN

获取价格

Ultrafast power diode in a 2-lead TO220 plastic package.
BYV10MB-600P WEEN

获取价格

Ultrafast power diode in a TO263 plastic package