BYG22A-M3/HM3, BYG22B-M3/HM3, BYG22D-M3/HM3
www.vishay.com
Vishay General Semiconductor
60
50
40
30
20
10
0
1000
TA = 125 °C
125 K/W DC
TA = 100 °C
100
tp/T = 0.5
TA = 75 °C
TA = 50 °C
tp/T = 0.2
tp/T = 0.1
10
tp/T = 0.05
TA = 25 °C
tp/T = 0.02
tp/T = 0.01
10-4
Single Pulse
IR = 0.5 A, iR = 0.125 A
1
10-5
10-3
10-2
Pulse Length (s)
10-1
100
101
102
0
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current
Fig. 8 - Thermal Response
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 19-Feb-15
Document Number: 89474
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000