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BYD13DGP-E3 PDF预览

BYD13DGP-E3

更新时间: 2024-11-21 20:03:19
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 320K
描述
Rectifier Diode, Avalanche, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN

BYD13DGP-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.76
其他特性:FREE WHEELING DIODE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:3 µs
表面贴装:NO技术:AVALANCHE
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

BYD13DGP-E3 数据手册

 浏览型号BYD13DGP-E3的Datasheet PDF文件第2页浏览型号BYD13DGP-E3的Datasheet PDF文件第3页浏览型号BYD13DGP-E3的Datasheet PDF文件第4页 
BYD13DGP thru BYD13MGP  
New Product  
Vishay General Semiconductor  
Avalanche Glass Passivated Junction Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
ERSM  
VF  
1.0 A  
200 V to 1000 V  
30 A  
7 mJ  
1.1 V, 1.2 V  
5.0 µA  
IR  
Tj max.  
175 °C  
* Glass-plastic encapsulation  
technique is covered by  
Patent No. 3,996,602,  
DO-204AL (DO-41)  
brazed-lead assembly  
by Patent No. 3,930,306  
Features  
Mechanical Data  
• Cavity-free glass-passivated junction  
• Avalanche surge capability guaranteed  
• Low forward voltage drop  
Case: DO-204AL, molded epoxy over glass body  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• Low leakage current, typical I less than 0.1 µA  
R
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder Dip 260 °C, 40 seconds  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
ply, inverters, converters and freewheeling applica-  
tions for consumer, automotive and Telecommuni-  
cation  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Device Marking Code  
Symbol BYD13DGP BYD13GGP BYD13JGP BYD13KGP BYD13MGP Unit  
13DGP  
200  
13GGP  
400  
13JGP  
600  
13KGP  
800  
13MGP  
1000  
Maximum repetitive peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VDC  
V
V
A
200  
400  
600  
1.0  
800  
1000  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length (See fig. 1)  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
30  
7
Non-repetitive peak reverse avalanche energy at  
L = 120 mH, Tj = Tj max. prior to surge  
ERSM  
mJ  
µA  
°C  
Maximum full load reverse current, full cycle  
average, 0.375" (9.5 mm) lead lengths at TA = 75 °C  
IR(AV)  
30  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number 88913  
31-Aug-05  
www.vishay.com  
1

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