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BUXD87 PDF预览

BUXD87

更新时间: 2024-11-04 22:12:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管开关高压
页数 文件大小 规格书
6页 205K
描述
HIGH VOLTAGE NPN POWER TRANSISTOR

BUXD87 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.71
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:450 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):20 MHz
Base Number Matches:1

BUXD87 数据手册

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BUXD87  
®
HIGH VOLTAGE NPN POWER TRANSISTOR  
REVERSE PINS OUT Vs STANDARD  
IPAK/DPAK PACKAGE  
HIGH VOLTAGE CAPABILITY  
HIGH DC CURRENT GAIN  
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX "-1")  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX "T4")  
3
3
2
1
1
APPLICATIONS:  
IPAK  
TO-251  
(Suffix "-1")  
DPAK  
TO-252  
(Suffix "T4")  
SWITCH MODE POWER SUPPLIES  
GENERAL PURPOSE SWITCHING  
DESCRIPTION  
The BUXD87 is manufactured using High Voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage withstand  
capability.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEV  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = -1.5V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1000  
V
V
450  
5
0.5  
V
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
1
A
IB  
0.3  
A
IBM  
Base Peak Current (tp < 5 ms)  
0.6  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
20  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
April 1999  

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