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BUXD87-1 PDF预览

BUXD87-1

更新时间: 2024-02-19 23:11:50
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
6页 72K
描述
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 500MA I(C) | TO-251

BUXD87-1 数据手册

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BUXD87  
HIGH VOLTAGE NPN POWER TRANSISTOR  
REVERSE PINS OUT Vs STANDARD  
IPAK/DPAKPACKAGE  
HIGH VOLTAGE CAPABILITY  
HIGH DC CURRENT GAIN  
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGEIN TUBE (SUFFIX ”-1”)  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX ”T4”)  
3
3
2
1
1
APPLICATIONS:  
IPAK  
TO-251  
(Suffix ”-1”)  
DPAK  
TO-252  
(Suffix ”T4”)  
SWITCH MODE POWER SUPPLIES  
GENERAL PURPOSE SWITCHING  
DESCRIPTION  
The BUXD87 is manufacturedusing High Voltage  
Multi Epitaxial Planar technology for high  
switching speeds and high voltage withstand  
capability.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCEV  
VCEO  
VEBO  
IC  
Parameter  
Collector-Emitter Voltage (VBE = -1.5V)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1000  
V
V
450  
5
0.5  
V
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
1
A
IB  
0.3  
A
IBM  
Base Peak Current (tp < 5 ms)  
0.6  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
20  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
April 1999  

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