BUXD87T4

更新时间： 2024-11-05 12:27:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管高压
页数	文件大小	规格书
6页	210K
描述
HIGH VOLTAGE NPN POWER TRANSISTOR

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中文翻译

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数据手册

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BUXD87T4 数据手册

BUXD87

HIGH VOLTAGE NPN POWER TRANSISTOR

■

REVERSE PINS OUT Vs STANDARD

IPAK/DPAK PACKAGE

■

HIGH VOLTAGE CAPABILITY

HIGH DC CURRENT GAIN

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX "-1")

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX "T4")

■

APPLICATIONS:

IPAK

TO-251

(Suffix "-1")

DPAK

TO-252

(Suffix "T4")

■

SWITCH MODE POWER SUPPLIES

GENERAL PURPOSE SWITCHING

■

DESCRIPTION

The BUXD87 is manufactured using High Voltage

Multi Epitaxial Planar technology for high

switching speeds and high voltage withstand

capability.

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CEV

V_CEO

V_EBO

I_C

Parameter

Collector-Emitter Voltage (V_BE= -1.5V)

Collector-Emitter Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

Value

Unit

1000

450

0.5

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

I_B

0.3

I_BM

Base Peak Current (t_p< 5 ms)

0.6

P_tot

Total Dissipation at T_c= 25 C

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

1/6

April 1999

12 3 4 5 6

中文翻译

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