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BUR52

更新时间: 2024-09-27 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 65K
描述
HIGH CURRENT NPN SILICON TRANSISTOR

BUR52 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-204AA包装说明:FLANGE MOUNT, O-MBFM-P2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.12
外壳连接:COLLECTOR最大集电极电流 (IC):60 A
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):15JEDEC-95代码:TO-3
JESD-30 代码:O-MBFM-P2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:200 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):245极性/信道类型:NPN
功耗环境最大值:350 W最大功率耗散 (Abs):350 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
最大关闭时间(toff):2600 ns最大开启时间(吨):1000 ns
VCEsat-Max:1.5 VBase Number Matches:1

BUR52 数据手册

 浏览型号BUR52的Datasheet PDF文件第2页浏览型号BUR52的Datasheet PDF文件第3页浏览型号BUR52的Datasheet PDF文件第4页 
BUR52  
HIGH CURRENT NPN SILICON TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPE  
NPN TRANSISTOR  
MAINTAINS GOOD SWITCHING  
PERFORMANCE EVEN WITHOUT  
NEGATIVE BASE DRIVE  
APPLICATIONS  
LINEAR AND SWITCHING INDUSTRIAL  
EQUIPMENT  
1
2
DESCRIPTION  
The BUR52 is a silicon multiepitaxial planar NPN  
transistors in modified Jedec TO-3 metal case,  
intented for use in switching and linear  
applications in military and industrial equipment.  
TO-3  
(version " P ")  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
350  
Unit  
V
V
250  
10  
V
60  
A
ICM  
Collector Peak Current (tp = 10 ms)  
Base Current  
80  
A
IB  
16  
A
o
Ptot  
Total Dissipation at Tc 25 C  
350  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 200  
200  
Max. Operating Junction Temperature  
1/4  
June 1997  

BUR52 替代型号

型号 品牌 替代类型 描述 数据表
BUR51 STMICROELECTRONICS

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