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BUR51 PDF预览

BUR51

更新时间: 2024-09-27 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
4页 68K
描述
HIGH CURRENT NPN SILICON TRANSISTOR

BUR51 数据手册

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BUR51  
HIGH CURRENT NPN SILICON TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPE  
NPN TRANSISTOR  
DESCRIPTION  
The BUR51 is a silicon multiepitaxial planar NPN  
transistor in modified Jedec TO-3 metal case,  
intented for use in switching and linear  
applications in military and industrial equipment.  
1
2
TO-3  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
300  
Unit  
V
V
200  
10  
V
60  
A
ICM  
Collector Peak Current (tp = 10 ms)  
Base Current  
80  
A
IB  
16  
A
o
Ptot  
Total Dissipation at Tc 25 C  
350  
W
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 200  
200  
Max. Operating Junction Temperature  
1/4  
June 1997  

BUR51 替代型号

型号 品牌 替代类型 描述 数据表
BUT92 STMICROELECTRONICS

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FAST-SWITCHING POWER TRANSISTOR
BUR52 STMICROELECTRONICS

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HIGH CURRENT NPN SILICON TRANSISTOR

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