Datasheet > BUR52_12

BUR52_12

更新时间： 2024-11-04 12:53:15

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	77K
描述
HIGH CURRENT NPN SILICON TRANSISTORS

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中文翻译

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数据手册

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BUR52_12 数据手册

BUR52

HIGH CURRENT NPN SILICON TRANSISTORS

The BUR52 is a silicon multiepitaxial planar NPN transistor in modified jedec TO-3 metal

case,

Intented for use in switching and linear applications in military and industrial equipment.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage (I_B= 0)

Collector-Base Voltage (I_E= 0)

Emitter-Base Voltage (I_C= 0)

V_CEO

V_CBO

V_EBO

250

350

I_C

Collector Current

I_C

I_CMt_p= (10 ms)

Base Current

I_B

Power Dissipation

Junction Temperature

Storage Temperature

@ T_C= 25°

P_T

T_J

T_S

350

200

-55 to +200

°C

THERMAL CHARACTERISTICS

Symbol

R_thJ-C

Ratings

Value

Unit

Thermal Resistance, Junction to Case

0.5

°C/W

COMSET SEMICONDUCTORS

1/3

12 3

中文翻译

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