BUL44F

更新时间： 2024-09-25 22:17:31

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
10页	319K
描述
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS

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BUL44F 数据手册

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by BUL44/D

SEMICONDUCTOR TECHNICAL DATA

NPN Bipolar Power Transistor

For Switching Power Supply Applications

*Motorola Preferred Device

The BUL44/BUL44F have an applications specific state–of–the–art die designed

for use in 220 V line operated Switchmode Power supplies and electronic light

ballasts. These high voltage/high speed transistors offer the following:

POWER TRANSISTOR

2.0 AMPERES

700 VOLTS

40 and 100 WATTS

•

Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain h

— Fast Switching

— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

Full Characterization at 125°C

Tight Parametric Distributions are Consistent Lot–to–Lot

Two Package Choices: Standard TO–220 or Isolated TO–220

•

BUL44F, Case 221D, is UL Recognized to 3500 V

: File #E69369

RMS

MAXIMUM RATINGS

Rating

Symbol

BUL44

BUL44F

Unit

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

400

700

9.0

Vdc

Adc

CEO

CES

EBO

BUL44

CASE 221A–06

TO–220AB

Collector Current — Continuous

— Peak(1)

2.0

5.0

Base Current — Continuous

— Peak(1)

1.0

2.0

Adc

RMS Isolated Voltage(2)

(for 1 sec, R.H. < 30%,

Test No. 1 Per Fig. 22a

Test No. 2 Per Fig. 22b

Test No. 3 Per Fig. 22c

ISOL

—

4500

3500

1500

Volts

= 25°C)

Total Device Dissipation

Derate above 25°C

(T = 25°C)

0.4

0.2

Watts

W/°C

Operating and Storage Temperature

T , T

– 65 to 150

°C

stg

THERMAL CHARACTERISTICS

Rating

Symbol

BUL44

BUL44F

Unit

BUL44F

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

Thermal Resistance — Junction to Case

θJC

θJA

2.5

62.5

5.0

62.5

°C/W

— Junction to Ambient

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

260

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

400

—

Vdc

µAdc

CEO(sus)

Collector Cutoff Current (V

= Rated V

, I = 0)

CEO

100

CEO

= Rated V

, V

= 0)

—

100

500

100

CES EB

CES

(T = 125°C)

Collector Cutoff Current (V

= 500 V, V

= 0)

(T = 125°C)

Emitter Cutoff Current (V

= 9.0 Vdc, I = 0)

—

100

µAdc

EBO

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7...10

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与BUL44F相关器件

型号	品牌	获取价格	描述	数据表
BUL44G	ONSEMI	获取价格	For Switching Power Supply Applicationsl
BUL44L	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44N	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44S	MOTOROLA	获取价格	2A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL44T	MOTOROLA	获取价格	2A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL44U	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44U2	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44UA	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44W	MOTOROLA	获取价格	2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL44WD	MOTOROLA	获取价格	Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast

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