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BUL44G

更新时间： 2024-11-14 12:32:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管局域网
页数 文件大小 规格书
8页 194K
描述
For Switching Power Supply Applicationsl

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中文翻译

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BUL44G 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：5.36其他特性：LEADFORM OPTIONS ARE AVAILABLE
外壳连接：COLLECTOR最大集电极电流 (IC)：2 A
集电极-发射极最大电压：400 V配置：SINGLE
最小直流电流增益 (hFE)：8JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：50 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：13 MHz

BUL44G 数据手册

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BUL44G  
SWITCHMODEt NPN  
Bipolar Power Transistor  
For Switching Power Supply Applications  
The BUL44G have an applications specific state−of−the−art die  
designed for use in 220 V line operated Switchmode Power supplies  
and electronic light ballasts.  
http://onsemi.com  
POWER TRANSISTOR  
2.0 AMPERES, 700 VOLTS,  
40 AND 100 WATTS  
Features  
• Improved Efficiency Due to Low Base Drive Requirements:  
High and Flat DC Current Gain h  
Fast Switching  
FE  
No Coil Required in Base Circuit for Turn−Off (No Current Tail)  
• Full Characterization at 125°C  
• Tight Parametric Distributions are Consistent Lot−to−Lot  
• These Devices are Pb−Free and are RoHS Compliant*  
TO−220AB  
CASE 221A−09  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
2
3
Collector−Emitter Sustaining Voltage  
V
CEO  
400  
Vdc  
Collector−Base Breakdown Voltage  
Emitter−Base Voltage  
V
700  
9.0  
Vdc  
Vdc  
Adc  
CES  
EBO  
V
MARKING DIAGRAM  
Collector Current − Continuous  
− Peak (Note 1)  
I
C
2.0  
5.0  
I
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
B
1.0  
2.0  
Adc  
BM  
BUL44G  
AY WW  
Total Device Dissipation @ T = 25_C  
P
50  
0.4  
W
W/_C  
C
D
Derate above 25°C  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
T , T  
−65 to 150  
_C  
J
stg  
BUL44 = Device Code  
Characteristics  
Symbol  
Max  
Unit  
_C/W  
_C/W  
_C  
A
Y
= Assembly Location  
= Year  
Thermal Resistance, Junction−to−Case  
R
q
JC  
2.5  
WW  
G
= Work Week  
= Pb−Free Package  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
62.5  
260  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
50 Units / Rail  
BUL44G  
TO−220  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 7  
BUL44/D  
 
12345678

中文翻译

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BUL44G 替代型号

型号 品牌 替代类型 描述 数据表
BUX85G ONSEMI

类似代替

 SWITCHMODE NPN Silicon Power Transistors
2SC5279 TOSHIBA

功能相似

 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC2552 TOSHIBA

功能相似

 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)

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BUL44U MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL44W MOTOROLA

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 		2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL44WD MOTOROLA

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 		Power Bipolar Transistor, 2A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL45 MOTOROLA

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 		POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

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