BUL45

更新时间： 2024-09-25 22:17:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	395K
描述
POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS

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BUL45 数据手册

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by BUL45/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

High Voltage SWITCHMODE Series

POWER TRANSISTOR

5.0 AMPERES

Designed for use in electronic ballast (light ballast) and in Switchmode Power

supplies up to 50 Watts. Main features include:

700 VOLTS

35 and 75 WATTS

•

Improved Efficiency Due to:

— Low Base Drive Requirements (High and Flat DC Current Gain h

— Low Power Losses (On–State and Switching Operations)

)

— Fast Switching: t = 100 ns (typ) and t = 3.2 µs (typ)

fi si

— Fast Switching: @ I = 2.0 A, I = I = 0.4 A

B1 B2

•

Full Characterization at 125°C

Tight Parametric Distributions Consistent Lot–to–Lot

BUL45F, Case 221D, is UL Recognized at 3500 V

: File #E69369

RMS

MAXIMUM RATINGS

Rating

Symbol

BUL45

BUL45F

Unit

Vdc

Adc

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

400

700

9.0

BUL45

CASE 221A–06

TO–220AB

CES

EBO

Collector Current — Continuous

— Peak(1)

5.0

Base Current

2.0

Adc

RMS Isolated Voltage(2)

(for 1 sec, R.H. < 30%,

Test No. 1 Per Fig. 22a

Test No. 2 Per Fig. 22b

Test No. 3 Per Fig. 22c

ISOL

—

4500

3500

1500

Volts

= 25°C)

Total Device Dissipation

Derate above 25°C

(T = 25°C)

0.6

0.28

Watts

W/°C

Operating and Storage Temperature

T , T

J stg

– 65 to 150

°C

THERMAL CHARACTERISTICS

Rating

BUL45F

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

Symbol MJE18006 MJF18006

Unit

Thermal Resistance — Junction to Case

θJC

θJA

1.65

62.5

3.55

62.5

°C/W

— Junction to Ambient

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

400

—

Vdc

µAdc

CEO(sus)

Collector Cutoff Current (V

= Rated V

, I = 0)

CEO

100

CEO

= Rated V

, V

= 0)

—

100

CES EB

CES

(T = 125°C)

Emitter Cutoff Current (V

= 9.0 Vdc, I = 0)

—

100

µAdc

EBO

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6 7...10

中文翻译

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BUL45 替代型号

型号	品牌	替代类型	描述	数据表
BUL45G	ONSEMI	类似代替	NPN Silicon Power Transistor

与BUL45相关器件

型号	品牌	获取价格	描述	数据表
BUL45/D	ETC	获取价格	NPN Silicon Power Transistor
BUL45_06	ONSEMI	获取价格	NPN Silicon Power Transistor
BUL4516	MOTOROLA	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL4516A	MOTOROLA	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL45A	MOTOROLA	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL45AF	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL45AJ	MOTOROLA	获取价格	暂无描述
BUL45AK	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45AN	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL45AS	ONSEMI	获取价格	5A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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