BUL146BV

更新时间： 2025-07-14 13:06:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关局域网
页数	文件大小	规格书
10页	391K
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数据手册

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BUL146BV 数据手册

ELECTRICAL CHARACTERISTICS — continued (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

Base–Emitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc)

—

0.82

0.93

1.1

1.25

Vdc

BE(sat)

Base–Emitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc)

Collector–Emitter Saturation Voltage (I = 1.3 Adc, I = 0.13 Adc)

—

0.22

0.20

0.30

0.5

0.7

CE(sat)

(T = 125°C)

Collector–Emitter Saturation Voltage (I = 3.0 Adc, I = 0.6 Adc)

(T = 125°C)

DC Current Gain (I = 0.5 Adc, V

= 5.0 Vdc)

= 1.0 Vdc)

—

(T = 125°C)

DC Current Gain (I = 1.3 Adc, V

8.0

7.0

(T = 125°C)

DC Current Gain (I = 3.0 Adc, V

(T = 125°C)

DC Current Gain (I = 10 mAdc, V

= 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (I = 0.5 Adc, V

= 10 Vdc, f = 1.0 MHz)

= 10 Vdc, I = 0, f = 1.0 MHz)

—

MHz

Output Capacitance (V

150

1500

Input Capacitance (V

= 8.0 V)

1000

—

2.5

6.5

—

1.0 µs

3.0 µs

1.0 µs

3.0 µs

(I = 1.3 Adc

(T = 125°C)

Dynamic Saturation Voltage:

Determined 1.0 µs and

3.0 µs respectively after

= 300 mAdc

—

0.6

2.5

—

= 300 V)

(T = 125°C)

CE(dsat)

rising I reaches 90% of

—

3.0

7.0

—

(I = 3.0 Adc

final I

(T = 125°C)

= 0.6 Adc

= 300 V)

(see Figure 18)

—

0.75

1.4

—

(T = 125°C)

SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)

Turn–On Time

(I = 1.3 Adc, I = 0.13 Adc

off

—

100

200

—

µs

= 0.65 Adc, V

= 300 V)

(T = 125°C)

Turn–Off Time

—

1.35

1.90

2.5

—

(T = 125°C)

Turn–On Time

Turn–Off Time

(I = 3.0 Adc, I = 0.6 Adc

—

100

150

—

= 1.5 Adc, V

= 300 V)

(T = 125°C)

—

1.7

2.1

2.5

—

(T = 125°C)

SWITCHING CHARACTERISTICS: Inductive Load (V

clamp

= 300 V, V = 15 V, L = 200 µH)

Fall Time

(I = 1.3 Adc, I = 0.13 Adc

—

115

120

200

—

µs

= 0.65 Adc)

(T = 125°C)

Storage Time

Crossover Time

Fall Time

—

1.35

1.75

2.5

—

(T = 125°C)

—

200

210

350

—

(T = 125°C)

(I = 3.0 Adc, I = 0.6 Adc

—

100

150

—

= 1.5 Adc)

(T = 125°C)

Storage Time

Crossover Time

Fall Time

—

1.75

2.25

2.5

—

(T = 125°C)

—

175

200

300

—

(T = 125°C)

(I = 3.0 Adc, I = 0.6 Adc

—

210

180

—

= 0.6 Adc)

(T = 125°C)

Storage Time

Crossover Time

2.6

—

4.5

3.8

—

(T = 125°C)

—

230

400

350

—

(T = 125°C)

Motorola Bipolar Power Transistor Device Data

123 4 5 6 7...10

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与BUL146BV相关器件

型号	品牌	获取价格	描述	数据表
BUL146C	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146D1	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL146DW	ONSEMI	获取价格	6A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, 3 PIN
BUL146F	MOTOROLA	获取价格	POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS
BUL146F	ONSEMI	获取价格	功率 8A 400V NPN
BUL146FG	ONSEMI	获取价格	SWITCHMODE NPN Bipolar Power Transistor
BUL146G	ONSEMI	获取价格	SWITCHMODE NPN Bipolar Power Transistor
BUL146L	MOTOROLA	获取价格	Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BUL146N	MOTOROLA	获取价格	8 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL146S	MOTOROLA	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB

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