BUL147

更新时间： 2024-11-04 22:27:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
10页	379K
描述
POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS

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BUL147 数据手册

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SEMICONDUCTOR TECHNICAL DATA

NPN Bipolar Power Transistor

For Switching Power Supply Applications

*Motorola Preferred Device

POWER TRANSISTOR

8.0 AMPERES

700 VOLTS

45 and 125 WATTS

The BUL147/BUL147F have an applications specific state–of–the–art die designed

for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power

supplies for all types of electronic equipment. These high–voltage/high–speed

transistors offer the following:

•

Improved Efficiency Due to Low Base Drive Requirements:

— High and Flat DC Current Gain

— Fast Switching

— No Coil Required in Base Circuit for Turn–Off (No Current Tail)

Parametric Distributions are Tight and Consistent Lot–to–Lot

Two Package Choices: Standard TO–220 or Isolated TO–220

•

BUL147F, Isolated Case 221D, is UL Recognized to 3500 V

: File #E69369

RMS

MAXIMUM RATINGS

Rating

Symbol

BUL147

BUL147F

400

Unit

Collector–Emitter Sustaining Voltage

Collector–Emitter Breakdown Voltage

Emitter–Base Voltage

CEO

Vdc

Adc

700

9.0

CES

EBO

BUL147

CASE 221A–06

TO–220AB

Collector Current — Continuous

— Peak(1)

8.0

Base Current — Continuous

— Peak(1)

4.0

8.0

Adc

RMS Isolated Voltage(2)

(for 1 sec, R.H. < 30%,

Test No. 1 Per Fig. 22a

Test No. 2 Per Fig. 22b

Test No. 3 Per Fig. 22c

ISOL

—

4500

3500

1500

Volts

= 25°C)

Total Device Dissipation

Derate above 25°C

(T = 25°C)

125

1.0

0.36

Watts

W/°C

Operating and Storage Temperature

T , T

– 65 to 150

°C

stg

THERMAL CHARACTERISTICS

Rating

Symbol

BUL44

BUL44F

Unit

BUL147F

CASE 221D–02

ISOLATED TO–220 TYPE

UL RECOGNIZED

Thermal Resistance — Junction to Case

θJC

θJA

1.0

62.5

2.78

62.5

°C/W

— Junction to Ambient

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

260

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

400

—

Vdc

µAdc

CEO(sus)

Collector Cutoff Current (V

= Rated V

, I = 0)

CEO

100

CEO

Collector Cutoff Current (V

= Rated V

, V

= 0)

—

100

500

100

CES EB

CES

(T = 125°C)

Collector Cutoff Current (V

= 500 V, V

= 0)

(T = 125°C)

Emitter Cutoff Current (V

= 9.0 Vdc, I = 0)

—

100

µAdc

EBO

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%.

(continued)

(2) Proper strike and creepage distance must be provided.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

3–1

12 3 4 5 6 7...10

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与BUL147相关器件

型号	品牌	获取价格	描述	数据表
BUL147/D	ETC	获取价格	SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
BUL14716	MOTOROLA	获取价格	10A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL14716A	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plas
BUL147A	MOTOROLA	获取价格	10A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL147AF	MOTOROLA	获取价格	10A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL147AF	ONSEMI	获取价格	TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
BUL147AJ	MOTOROLA	获取价格	10A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB
BUL147AJ	ONSEMI	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL147AK	ONSEMI	获取价格	8A, 400V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BUL147AN	ONSEMI	获取价格	TRANSISTOR 8 A, 400 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu

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