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BUL147/D PDF预览

BUL147/D

更新时间: 2024-09-14 23:37:23
品牌 Logo 应用领域
其他 - ETC 晶体开关晶体管
页数 文件大小 规格书
8页 157K
描述
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications

BUL147/D 数据手册

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ON Semiconductort  
BUL147  
SWITCHMODE  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
POWER TRANSISTOR  
8.0 AMPERES  
700 VOLTS  
45 and 125 WATTS  
The BUL147 have an applications specific state–of–the–art die  
designed for use in electric fluorescent lamp ballasts to 180 Watts and  
in Switchmode Power supplies for all types of electronic equipment.  
These high–voltage/high–speed transistors offer the following:  
Improved Efficiency Due to Low Base Drive Requirements:  
High and Flat DC Current Gain  
Fast Switching  
No Coil Required in Base Circuit for Turn–Off (No Current  
Tail)  
Parametric Distributions are Tight and Consistent Lot–to–Lot  
Two Package Choices: Standard TO–220 or Isolated TO–220  
MAXIMUM RATINGS  
Rating  
Symbol  
BUL147  
Unit  
BUL147  
CASE 221A–09  
TO–220AB  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
400  
700  
9.0  
Vdc  
Vdc  
Vdc  
Adc  
V
CES  
EBO  
V
Collector Current — Continuous  
— Peak(1)  
I
C
8.0  
16  
I
I
CM  
Base Current — Continuous  
— Peak(1)  
I
B
4.0  
8.0  
Adc  
BM  
Total Device Dissipation  
Derate above 25°C  
(T = 25°C)  
C
P
D
125  
1.0  
Watts  
W/°C  
Operating and Storage Temperature  
THERMAL CHARACTERISTICS  
Rating  
T , T  
– 65 to 150  
°C  
J
stg  
Symbol  
BUL44  
Unit  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
R
1.0  
62.5  
°C/W  
θ
JC  
JA  
θ
Maximum Lead Temperature for Soldering  
T
L
260  
°C  
Purposes: 1/8from Case for 5 Seconds  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 4  
BUL147/D  

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