是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 2.6 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-609代码: | e0 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 45 W | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK428-500B | ETC |
获取价格 |
N-Channel Enhancement MOSFET |
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BUK428-800A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.4A I(D) | SOT-199 |
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BUK428-800B | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3A I(D) | SOT-199 |
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BUK436-1000A | ETC |
获取价格 |
N-Channel Enhancement MOSFET |
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BUK436-1000B | PHILIPS |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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BUK436-100A | NXP |
获取价格 |
TRANSISTOR 33 A, 100 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power |
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BUK436-100B | ETC |
获取价格 |
N-Channel Enhancement MOSFET |
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BUK436-100B/B | ETC |
获取价格 |
TRANSISTOR MOSFET TO 247 |
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BUK436-200A | NXP |
获取价格 |
PowerMOS transistor |
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BUK436-200A/B | ETC |
获取价格 |
TRANSISTOR MOSFET TO 247 |
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