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BUD44D2/D PDF预览

BUD44D2/D

更新时间: 2024-11-19 23:37:19
品牌 Logo 应用领域
其他 - ETC 晶体二极管晶体管
页数 文件大小 规格书
12页 257K
描述
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

BUD44D2/D 数据手册

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ON Semiconductort  
BUD44D2  
High Speed, High Gain Bipolar  
NPN Power Transistor with  
Integrated Collector-Emitter  
Diode and Built-in Efficient  
Antisaturation Network  
POWER TRANSISTORS  
2 AMPERES  
700 VOLTS  
25 WATTS  
The BUD44D2 is state–of–art High Speed High gain BIPolar  
transistor (H2BIP). High dynamic characteristics and lot to lot  
minimum spread (±150 ns on storage time) make it ideally suitable for  
light ballast applications. Therefore, there is no need to guarantee an  
h
FE  
window.  
Main features:  
Low Base Drive Requirement  
High Peak DC Current Gain (55 Typical) @ I = 100 mA  
C
Extremely Low Storage Time Min/Max Guarantees Due to the  
H2BIP Structure which Minimizes the Spread  
Integrated Collector–Emitter Free Wheeling Diode  
CASE 369–07  
Fully Characterized and Guaranteed Dynamic V  
CE(sat)  
Six Sigma Process Providing Tight and Reproductible Parameter  
Spreads  
It’s characteristics make it also suitable for PFC application.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
400  
700  
700  
12  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
CASE 369A–13  
Collector–Emitter Sustaining Voltage  
Collector–Base Breakdown Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
MINIMUM PAD SIZES REC-  
OMMENDED FOR  
V
V
CES  
SURFACE MOUNTED  
APPLICATIONS  
EBO  
Collector Current — Continuous  
— Peak (1)  
I
C
2
5
I
CM  
6.7  
0.265  
Base Current — Continuous  
Base Current — Peak (1)  
I
B
1
2
Adc  
I
BM  
*Total Device Dissipation @ T = 25_C  
P
D
25  
0.2  
Watt  
W/_C  
C
*Derate above 25°C  
Operating and Storage Temperature  
T , T  
–65 to 150  
_C  
J
stg  
THERMAL CHARACTERISTICS  
1.6  
1.6  
0.063  
0.063  
Thermal Resistance  
— Junction to Case  
— Junction to Ambient  
_C/W  
2.3  
2.3  
R
R
5
71.4  
θ
JC  
JA  
0.090 0.090  
θ
Maximum Lead Temperature for Soldering  
Purposes: 1/8from case for 5 seconds  
T
L
260  
_C  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev.2  
BUD44D2/D  

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