ON Semiconductort
BUD44D2
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network
POWER TRANSISTORS
2 AMPERES
700 VOLTS
25 WATTS
The BUD44D2 is state–of–art High Speed High gain BIPolar
transistor (H2BIP). High dynamic characteristics and lot to lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an
h
FE
window.
Main features:
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ I = 100 mA
C
• Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
CASE 369–07
• Fully Characterized and Guaranteed Dynamic V
CE(sat)
• Six Sigma Process Providing Tight and Reproductible Parameter
Spreads
• It’s characteristics make it also suitable for PFC application.
MAXIMUM RATINGS
Rating
Symbol
Value
400
700
700
12
Unit
Vdc
Vdc
Vdc
Vdc
Adc
CASE 369A–13
Collector–Emitter Sustaining Voltage
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
V
CEO
V
CBO
MINIMUM PAD SIZES REC-
OMMENDED FOR
V
V
CES
SURFACE MOUNTED
APPLICATIONS
EBO
Collector Current — Continuous
— Peak (1)
I
C
2
5
I
CM
6.7
0.265
Base Current — Continuous
Base Current — Peak (1)
I
B
1
2
Adc
I
BM
*Total Device Dissipation @ T = 25_C
P
D
25
0.2
Watt
W/_C
C
*Derate above 25°C
Operating and Storage Temperature
T , T
–65 to 150
_C
J
stg
THERMAL CHARACTERISTICS
1.6
1.6
0.063
0.063
Thermal Resistance
— Junction to Case
— Junction to Ambient
_C/W
2.3
2.3
R
R
5
71.4
θ
JC
JA
0.090 0.090
θ
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from case for 5 seconds
T
L
260
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2001 – Rev.2
BUD44D2/D