BUD616A

更新时间： 2024-09-12 21:54:19

品牌	Logo	应用领域
威世 - VISHAY		晶体开关晶体管
页数	文件大小	规格书
9页	137K
描述
Silicon NPN High Voltage Switching Transistor

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中文翻译

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数据手册

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BUD616A 数据手册

BUD616A

Vishay Telefunken

Silicon NPN High Voltage Switching Transistor

Features

Simple-sWitch-Off Transistor (SWOT)

Very low dynamic saturation

Very low operating temperature

Optimized RBSOA

HIGH SPEED technology

Planar passivation

100 kHz switching rate

Very low switching losses

High reverse voltage

Applications

Electronic lamp ballast circuits

Switch-mode power supplies

94 8965

94 8964

BUD616A

BUD616A –SMD

1 Emitter 2 Collector 3 Base

Absolute Maximum Ratings

case

= 25°C, unless otherwise specified

Parameter

Collector-emitter voltage

Test Conditions

Symbol

CEO

Value

450

Unit

1000

1.6

CES

EBO

Emitter-base voltage

Collector current

Collector peak current

Base current

Base peak current

2.4

0.8

1.2

Total power dissipation

Junction temperature

Storage temperature range

case

≤ 50 C

stg

150

–65 to +150

tot

Document Number 86501

Rev. 1, 20–Jan–99

www.vishay.de • FaxBack +1-408-970-5600

1 (9)

12 3 4 5 6 7...9

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与BUD616A相关器件

型号	品牌	获取价格	描述	数据表
BUD616A-SMD	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 450V V(BR)CEO \| 1.6A I(C) \| TO-252AA
BUD620	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 4A I(C) \| TO-251
BUD620SMD	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 4A I(C) \| TO-251
BUD630	TEMIC	获取价格	Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic
BUD630	VISHAY	获取价格	Transistor,
BUD630SMD	VISHAY	获取价格	Transistor,
BUD630-SMD	TEMIC	获取价格	Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic
BUD636A	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 450V V(BR)CEO \| 5A I(C) \| TO-251
BUD636A-SMD	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 450V V(BR)CEO \| 5A I(C) \| TO-252
BUD700D		获取价格	Silicon NPN High Voltage Switching Transistor