Datasheet > BUD600

BUD600

更新时间： 2024-10-31 21:54:39

品牌	Logo	应用领域
TEMIC		晶体开关晶体管
页数	文件大小	规格书
9页	169K
描述
Silicon NPN Hugh Voltage Switching Transistor

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中文翻译

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数据手册

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BUD600 数据手册

BUD600

Silicon NPN High Voltage Switching Transistor

Features

Simple-sWitch-Off Transistor (SWOT)

HIGH SPEED technology

Planar passivation

Very low dynamic saturation

Very low operating temperature

Optimized RBSOA

100 kHz switching rate

High reverse voltage

Very low switching losses

Applications

Electronic lamp ballast circuits

Switch-mode power supplies

94 8965

94 8964

BUD600

1 Base 2 Collector 3 Emitter

BUD600 –SMD

1 Base 2 Collector 3 Emitter

Absolute Maximum Ratings

case

= 25°C, unless otherwise specified

Parameter

Collector-emitter voltage

Test Conditions

Symbol

Value

250

Unit

CEO

CEW

300

600

CES

EBO

Emitter-base voltage

Collector current

Collector peak current

Base current

0.75

Base peak current

150

Total power dissipation

Junction temperature

Storage temperature range

case

≤ 60 C

tot

–65 to +150

stg

TELEFUNKEN Semiconductors

1 (9)

Rev. B2, 18-Jul-97

12 3 4 5 6 7...9

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与BUD600相关器件

型号	品牌	获取价格	描述	数据表
BUD600SMD	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 250V V(BR)CEO \| 2A I(C) \| TO-251
BUD600-SMD	TEMIC	获取价格	Silicon NPN Hugh Voltage Switching Transistor
BUD616A	VISHAY	获取价格	Silicon NPN High Voltage Switching Transistor
BUD616A-SMD	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 450V V(BR)CEO \| 1.6A I(C) \| TO-252AA
BUD620	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 4A I(C) \| TO-251
BUD620SMD	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 400V V(BR)CEO \| 4A I(C) \| TO-251
BUD630	TEMIC	获取价格	Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic
BUD630	VISHAY	获取价格	Transistor,
BUD630SMD	VISHAY	获取价格	Transistor,
BUD630-SMD	TEMIC	获取价格	Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic