生命周期: | Transferred | Reach Compliance Code: | unknown |
风险等级: | 5.72 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 250 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 4 |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUD616A | VISHAY |
获取价格 |
Silicon NPN High Voltage Switching Transistor | |
BUD616A-SMD | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 1.6A I(C) | TO-252AA | |
BUD620 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251 | |
BUD620SMD | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 4A I(C) | TO-251 | |
BUD630 | TEMIC |
获取价格 |
Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, Plastic | |
BUD630 | VISHAY |
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Transistor, | |
BUD630SMD | VISHAY |
获取价格 |
Transistor, | |
BUD630-SMD | TEMIC |
获取价格 |
Power Bipolar Transistor, 6A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic | |
BUD636A | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-251 | |
BUD636A-SMD | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-252 |