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BU931T PDF预览

BU931T

更新时间: 2024-11-15 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体驱动器晶体管功率双极晶体管高压
页数 文件大小 规格书
7页 74K
描述
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTONS

BU931T 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:8 weeks
风险等级:1.25Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:221716
Samacsys Pin Count:3Samacsys Part Category:Transistor
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-220 TYPE A
Samacsys Released Date:2015-07-22 14:47:16Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTORS外壳连接:COLLECTOR
最大集电极电流 (IC):10 A集电极-发射极最大电压:400 V
配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):300
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:125 W
最大功率耗散 (Abs):125 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
VCEsat-Max:1.8 VBase Number Matches:1

BU931T 数据手册

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BU931T  
BUB931T  
HIGH VOLTAGE IGNITION COIL DRIVER  
NPN POWER DARLINGTONS  
VERY RUGGED BIPOLAR TECHNOLOGY  
HIGH OPERATING JUNCTION  
TEMPERATURE  
WIDE RANGE OF PACKAGES  
SURFACE-MOUNTING D2PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX)  
OR IN TAPE & REEL (SUFFIX ”T4”)  
APPLICATIONS  
3
3
2
HIGH RUGGEDNESS ELECTRONIC  
IGNITIONS  
1
1
TO-220  
D2PAK  
TO-263  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCES  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
Collector-Emitter Voltage (VBE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
500  
V
V
400  
5
V
10  
A
ICM  
Collector Peak Current  
Base Current  
15  
A
IB  
1
5
A
IBM  
Base Peak Current  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
125  
W
oC  
oC  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
1/7  
January 1999  

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