Datasheet > BU931T_03

BU931T_03

更新时间： 2024-11-16 03:23:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体驱动器晶体管达林顿晶体管高压
页数	文件大小	规格书
6页	670K
描述
HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTOR

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中文翻译

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数据手册

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BU931T_03 数据手册

BU931T

HIGH VOLTAGE IGNITION COIL DRIVER

NPN POWER DARLINGTON TRANSISTOR

■

VERY RUGGED BIPOLAR TECHNOLOGY

HIGH OPERATING JUNCTION

TEMPERATURE

APPLICATIONS

■

HIGH RUGGEDNESS ELECTRONIC

IGNITIONS

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V_CES

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Emitter Voltage (V_BE= 0)

Emitter-Base Voltage (I_B= 0)

Emitter-Base Voltage (I_C= 0)

Collector Current

500

400

I_CM

Collector Peak Current

Base Current

I_B

I_BM

Base Peak Current

P_tot

Total Dissipation at T_c= 25 C

125

^oC

T_stg

T_j

Storage Temperature

-65 to 175

175

Max. Operating Junction Temperature

1/6

October 2003

12 3 4 5 6

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