Datasheet > BU931Z

BU931Z

更新时间： 2024-11-16 06:44:39

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	111K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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BU931Z 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BU931Z

DESCRIPTION

·With TO-3 package

·DARLINGTON

·High breakdown voltage

APPLICATIONS

·Application in high performance

electronic car ignition

PINNING(see Fig.2)

DESCRIPTION

Base

Emitter

Fig.1 simplified outline (TO-3) and symbol

Collector

Absolute maximum ratings (Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

Open emitter

VALUE

350

UNIT

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Open base

Open collector

I_B

Base current

P_T

Total power dissipation

Max.operating junction temperature

Storage temperature

T_C=25ꢀ

175

200

-40~200

ꢀ

T_j

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal resistance junction case

1.0

ꢀ/W

R_{th j-case}

12 3

中文翻译

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与BU931Z相关器件

型号	品牌	获取价格	描述	数据表
BU931Z_10	UTC	获取价格	NPN POWER DARLINGTON
BU931Z_15	UTC	获取价格	NPN POWER DARLINGTON
BU931ZG-T3P-T	UTC	获取价格	NPN POWER DARLINGTON
BU931ZG-TA3-T	UTC	获取价格	NPN POWER DARLINGTON
BU931ZL-T3P-T	UTC	获取价格	NPN POWER DARLINGTON
BU931ZL-TA3-T	UTC	获取价格	Power Bipolar Transistor
BU931ZP	SAVANTIC	获取价格	Silicon NPN Power Transistors
BU931ZPFI	ISC	获取价格	isc Silicon NPN Power Transistor
BU931ZSM	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 350V V(BR)CEO \| 10A I(C)
BU931ZT	ETC	获取价格	TRANSISTOR \| BJT \| DARLINGTON \| NPN \| 350V V(BR)CEO \| 10A I(C) \| TO-220