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BU808 PDF预览

BU808

更新时间: 2024-11-11 22:27:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关高压
页数 文件大小 规格书
7页 74K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

BU808 数据手册

 浏览型号BU808的Datasheet PDF文件第2页浏览型号BU808的Datasheet PDF文件第3页浏览型号BU808的Datasheet PDF文件第4页浏览型号BU808的Datasheet PDF文件第5页浏览型号BU808的Datasheet PDF文件第6页浏览型号BU808的Datasheet PDF文件第7页 
BU808DFI  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER DARLINGTON  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN MONOLITHIC DARLINGTON WITH  
INTEGRATED FREE-WHEELING DIODE  
HIGH VOLTAGE CAPABILITY ( > 1400 V )  
HIGH DC CURRENT GAIN ( TYP. 150 )  
U.L. RECOGNISED ISOWATT218 PACKAGE  
(U.L. FILE # E81734 (N))  
3
LOW BASE-DRIVE REQUIREMENTS  
DEDICATED APPLICATION NOTE AN1184  
2
1
APPLICATIONS  
ISOWATT218  
COST EFFECTIVE SOLUTION FOR  
HORIZONTAL DEFLECTION IN LOW END  
TV UP TO 21 INCHES.  
DESCRIPTION  
The BU808DFI is a NPN transistor in monolithic  
Darlington configuration. It is manufactured using  
Multiepitaxial Mesa technology for cost-effective  
high performance.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1400  
V
V
700  
5
V
8
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
10  
A
IB  
3
A
IBM  
Base Peak Current (tp < 5 ms)  
6
52  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
June 2000  

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