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BU808DFP PDF预览

BU808DFP

更新时间: 2024-11-11 22:24:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管开关高压局域网
页数 文件大小 规格书
7页 74K
描述
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON

BU808DFP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220FP包装说明:TO-220FP, 3 PIN
针数:3Reach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):8 A
集电极-发射极最大电压:700 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):60JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):42 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BU808DFP 数据手册

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BU808DFP  
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER DARLINGTON  
STMicroelectronics PREFERRED  
SALESTYPE  
NPN MONOLITHIC DARLINGTON WITH  
INTEGRATED FREE-WHEELING DIODE  
HIGH VOLTAGE CAPABILITY ( > 1400 V )  
HIGH DC CURRENT GAIN ( TYP. 150 )  
FULLY MOLDED ISOLATED PACKAGE 2KV  
DC ISOLATION(U.L. COMPLIANT)  
3
LOW BASE-DRIVE REQUIREMENTS  
DEDICATED APPLICATION NOTE AN1184  
2
1
APPLICATIONS  
TO-220FP  
COST EFFECTIVE SOLUTION FOR  
HORIZONTAL DEFLECTION IN LOW END  
TV UP TO 21 INCHES.  
DESCRIPTION  
The BU808DFP is a NPN transistor in monolithic  
Darlington configuration. It is manufactured using  
Multiepitaxial Mesa technology for cost-effective  
high performance.  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
1400  
V
V
700  
5
V
8
A
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
10  
A
IB  
3
A
IBM  
Base Peak Current (tp < 5 ms)  
6
42  
A
o
Ptot  
Tstg  
Tj  
Total Dissipation at Tc = 25 C  
W
oC  
oC  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/7  
June 2000  

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