Datasheet > BU806

BU806

更新时间： 2024-11-21 12:50:15

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描述
MEDIUM Voltage & Fast Switching DarlingtonTransistor

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BU806 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

BU806

MEDIUM Voltage & Fast Switching DarlingtonTransistor

DESCRIPTION

The devices are silicon Epitaxial Planar NPN power transistors in Darlington

configuration with integrated base-emitter speed-up diode, mounted

in TO-220 plastic package.

They can be used in horizontal output stages of 110 ^oCRT video displays.

℃

Absolute Maximum Ratings ( Ta = 25

)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Value Unit

V_CBO

400

V_CEO

V_EBO

I_C

200

8.0

2.0

Base Current

I_B

Total Dissipation at

P_tot

T_j

^oC

150

Max. Operating Junction Temperature

Storage Temperature

TO-220

T_stg

-55~150 ^oC

℃

Electrical Characteristics ( Ta = 25

)

Parameter

Symbol

Test Conditions

Min.

—

Typ.

—

Max. Unit

Collector Cut-off Current

I_CES

V_CE=400V, V_BEO=0

V_EB=6V, I_C=0

100

I_EBO

V_CEO

h_FE(1)

V_CE(sat)

V_BE(sat)

V_F

Emitter Cut-off Current

3.5

—

Collector-Emitter Sustaining Voltage

DC Current Gain

I_C=100mA, I_B=0

V_CE=5V, I_C=5.0A

I_C=5.0A,I_B=50mA

I_F=4.0A

200

—

1.5

2.4

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Damper Diode Forward Voltage

Storage Time

—

T_S

I_C=5A, I_B=0.5A

0.55

—

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