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BU806BC

更新时间: 2024-11-21 13:05:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 108K
描述
TRANSISTOR 8 A, 200 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

BU806BC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.77
外壳连接:COLLECTOR最大集电极电流 (IC):8 A
集电极-发射极最大电压:200 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):100JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

BU806BC 数据手册

 浏览型号BU806BC的Datasheet PDF文件第2页浏览型号BU806BC的Datasheet PDF文件第3页浏览型号BU806BC的Datasheet PDF文件第4页 
Order this document  
by BU806/D  
SEMICONDUCTOR TECHNICAL DATA  
8.0 AMPERE  
DARLINGTON  
NPN POWER  
TRANSISTORS  
60 WATTS  
This Darlington transistor is a high voltage, high speed device for use in horizontal  
deflection circuits in TV’s and CRT’s.  
High Voltage: V  
= 330 or 400 V  
Fast Switching Speed:  
CEV  
t = 1.0 µs (max)  
c
200 VOLTS  
Low Saturation Voltage:  
V
= 1.5 V (max)  
CE(sat)  
Packaged in JEDEC TO–220AB  
Damper Diode V is specified.  
F
V
= 2.0 V (max)  
F
CASE 221A–06  
TO–220AB  
MAXIMUM RATINGS  
Rating  
Symbol  
BU806  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
200  
400  
400  
6.0  
V
CEV  
CBO  
EBO  
V
V
Collector Current — Continuous  
— Peak  
I
C
8.0  
15  
Emitter–Collector Diode Current  
Base Current  
I
10  
Adc  
Adc  
F
I
B
2.0  
Total Device Dissipation, T = 25°C  
Derate above T = 25 C  
C
P
D
60  
0.48  
Watts  
W/ C  
C
Operating and Storage Junction Temperature Range  
T , T  
65 to 150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.08  
70  
Unit  
C/W  
C/W  
C
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
R
θJC  
θJA  
Lead Temperature for Soldering Purposes,  
1/8from Case for 5.0 Seconds  
T
L
275  
REV 1  
Motorola, Inc. 1995

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