生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.7 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 8 A |
集电极-发射极最大电压: | 200 V | 配置: | DARLINGTON |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 60 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BU806D1 | MOTOROLA |
获取价格 |
8A, 200V, NPN, Si, POWER TRANSISTOR, TO-220AB | |
BU806DW | ONSEMI |
获取价格 |
8A, 200V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN | |
BU806FI | ETC |
获取价格 |
TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 8A I(C) | TO-220 | |
BU806J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
BU806L | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
BU8-06-LFR | FRONTIER |
获取价格 |
8A SILICON SINGLE-PHASE BRIDGE RECTIFIERS | |
BU806N | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
BU806S | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
BU806T | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 8A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
BU806U | MOTOROLA |
获取价格 |
8A, 200V, NPN, Si, POWER TRANSISTOR, TO-220AB |