BU705D

更新时间： 2024-11-03 09:02:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	106K
描述
isc Silicon NPN Power Transistor

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BU705D 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU705D

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 700V (Min)

·High Switching Speed

·Built-in Integrated Efficiency Diode

APPLICATIONS

·Designed for use in horizontal deflection circuits of TV

receivers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CES

V_CEO

V_EBO

I_C

PARAMETER

VALUE

UNIT

Collector- Emitter Voltage(V_BE= 0)

Collector-Emitter Voltage

Emitter-Base Voltage

1500

700

Collector Current- Continuous

Collector Current-Peak t_p<2ms

Base Current- Continuous

Base Current-Peak t_p<2ms

2.5

I_CM

I_B

I_BM

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.67

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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