BU706F

更新时间： 2024-11-03 09:02:15

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	90K
描述
isc Silicon NPN Power Transistor

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BU706F 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU706F

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 700V(Min)

·High Switching Speed

APPLICATIONS

·Designed for use in horizontal deflection circuits of color TV

receivers and line operated switch-mode applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CES

V_CEO

V_EBO

I_C

PARAMETER

Collector- Emitter Voltage V_BE=0

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

1500

700

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_CM

I_B

I_BM

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance, Junction to Case

3.95

R_{th j-c}

Rth j-a

Thermal Resistance, Junction to Ambient

isc Website：www.iscsemi.cn

中文翻译

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