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BU706D PDF预览

BU706D

更新时间: 2024-11-21 09:02:15
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
2页 90K
描述
isc Silicon NPN Power Transistor

BU706D 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Is Samacsys:NBase Number Matches:1

BU706D 数据手册

 浏览型号BU706D的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BU706D  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 700V(Min)  
·High Switching Speed  
·Built-in Integrated Diode  
APPLICATIONS  
·Designed for use in horizontal deflection circuits of color TV  
receivers and line operated switch-mode applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
PARAMETER  
Collector- Emitter Voltage VBE=0  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
UNIT  
V
1500  
700  
V
6
V
Collector Current-Continuous  
Collector Current-Peak  
Base Current-Continuous  
Base Current-Peak  
5
A
ICM  
8
3
A
IB  
A
IBM  
5
A
Collector Power Dissipation  
@ TC=25℃  
PC  
100  
150  
-65~150  
W
TJ  
Junction Temperature  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
1.25  
/W  
Rth j-c  
isc Websitewww.iscsemi.cn  

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