Datasheet > BU406B

BU406B

更新时间： 2024-11-04 17:01:15

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	391K
描述
200V,7A,General Purpose NPN Bipolar Transistor

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BU406B 数据手册

NPN Epitaxial Silicon Transistor

BU406B

Features



Epitaxial planar die construction

Ideal for low power amplification and switching

Mechanic al Data



Case: TO-263

Molding compound: UL flammability classification rating 94V-0

Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208

TO-263

Ordering Information

Part Number

Package

TO-263

Shipping Quantity

Marking Code

BU406

BU406B

50pcs / Tube or 800pcs / Tape & Reel

Maximum Ratings (@T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

400

200

Unit

Thermal Characteristics

Parameter

Power Dissipation (Collector) ( T_A= 25℃)

Junction Temperature

Symbol

P_C

Value

Unit

T_J

150

°C

Storage Temperature Range

T_STG

-55 ~ +150

°C

Note 1: Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.

STM0406A: April 2020

www.gmesemi.com

12 3 4

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与BU406B相关器件

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BU406BA	ONSEMI	获取价格	7A, 200V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BU406BC	ONSEMI	获取价格	7A, 200V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BU406BD	ONSEMI	获取价格	7A, 200V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BU406BG	ONSEMI	获取价格	7A, 200V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
BU406BS	ONSEMI	获取价格	TRANSISTOR 7 A, 200 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
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BU406-B-TA3-T	UTC	获取价格	Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
BU406-B-TF3-T	UTC	获取价格	Power Bipolar Transistor, 7A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
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BU406BV	ONSEMI	获取价格	7A, 200V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN