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BTS612N1E3230 PDF预览

BTS612N1E3230

更新时间: 2024-01-22 16:26:27
品牌 Logo 应用领域
英飞凌 - INFINEON 开关接口集成电路电源开关驱动局域网
页数 文件大小 规格书
15页 308K
描述
Smart Two Channel Highside Power Switch

BTS612N1E3230 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:, SIP7,.1,50TB针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.3
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:2
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSFM-T7
功能数量:2端子数量:7
输出电流流向:SOURCE标称输出峰值电流:7.5 A
封装主体材料:PLASTIC/EPOXY封装等效代码:SIP7,.1,50TB
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
电源:5/34 V认证状态:Not Qualified
子类别:Peripheral Drivers最大供电电压:34 V
最小供电电压:5 V标称供电电压:12 V
表面贴装:NO技术:MOS
端子形式:THROUGH-HOLE端子节距:1.27 mm
端子位置:SINGLE断开时间:400 µs
接通时间:400 µsBase Number Matches:1

BTS612N1E3230 数据手册

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®
PROFET  
BTS612N1  
Smart Two Channel Highside Power Switch  
Features  
Product Summary  
Overvoltage protection Vbb(AZ)  
Overload protection  
Current limitation  
Short circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
43  
V
V
5.0 ... 34 V  
both  
parallel  
Operating voltage  
bb(on)  
channels: each  
On-state resistance RON  
Load current (ISO) IL(ISO)  
200  
2.3  
4
100  
4.4  
4
mΩ  
A
1
)
Reverse battery protection  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
Current limitation  
IL(SCr)  
A
Open drain diagnostic output  
Open load detection in OFF-state  
CMOS compatible input  
Loss of ground and loss of V protection  
Electrostatic discharge (ESD) protection  
TO-220AB/7  
bb  
7
7
7
1
1
Application  
1
Straight leads  
SMD  
Standard  
µC compatible power switch with diagnostic  
feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.  
+ V  
bb  
4
Current  
limit 1  
Gate 1  
Voltage  
source  
Overvoltage  
protection  
protection  
V
Logic  
OUT1  
Limit for  
Level shifter  
Rectifier 1  
Voltage  
sensor  
unclamped  
ind. loads 1  
1
7
Temperature  
sensor 1  
3
6
IN1  
IN2  
Charge  
pump 1  
Open load  
Short to Vbb  
detection 1  
Logic  
ESD  
Charge  
pump 2  
5
Gate 2  
protection  
ST  
Current  
limit 2  
OUT2  
Level shifter  
Rectifier 2  
Limit for  
unclamped  
ind. loads 2  
Load  
Temperature  
sensor 2  
Open load  
Short to Vbb  
detection 2  
GND  
PROFET  
2
Signal GND  
Load GND  
1)  
With external current limit (e.g. resistor R =150 ) in GND connection, resistor in series with ST  
GND  
connection, reverse load current limited by connected load.  
Semiconductor Group  
1 of 15  
2003-Oct-01  

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