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BTS612N1E3230 PDF预览

BTS612N1E3230

更新时间: 2024-01-11 22:59:59
品牌 Logo 应用领域
英飞凌 - INFINEON 开关接口集成电路电源开关驱动局域网
页数 文件大小 规格书
15页 308K
描述
Smart Two Channel Highside Power Switch

BTS612N1E3230 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:, SIP7,.1,50TB针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.3
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:2
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSFM-T7
功能数量:2端子数量:7
输出电流流向:SOURCE标称输出峰值电流:7.5 A
封装主体材料:PLASTIC/EPOXY封装等效代码:SIP7,.1,50TB
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
电源:5/34 V认证状态:Not Qualified
子类别:Peripheral Drivers最大供电电压:34 V
最小供电电压:5 V标称供电电压:12 V
表面贴装:NO技术:MOS
端子形式:THROUGH-HOLE端子节距:1.27 mm
端子位置:SINGLE断开时间:400 µs
接通时间:400 µsBase Number Matches:1

BTS612N1E3230 数据手册

 浏览型号BTS612N1E3230的Datasheet PDF文件第1页浏览型号BTS612N1E3230的Datasheet PDF文件第2页浏览型号BTS612N1E3230的Datasheet PDF文件第3页浏览型号BTS612N1E3230的Datasheet PDF文件第5页浏览型号BTS612N1E3230的Datasheet PDF文件第6页浏览型号BTS612N1E3230的Datasheet PDF文件第7页 
BTS612N1  
Unit  
Parameter and Conditions, each channel  
Symbol  
Values  
at Tj = 25 °C, V = 12 V unless otherwise specified  
bb  
min  
typ  
max  
Operating Parameters  
Operating voltage6)  
Undervoltage shutdown  
Undervoltage restart  
T =-40...+150°C: Vbb(on)  
5.0  
3.5  
--  
--  
--  
--  
34  
V
V
V
j
T =-40...+150°C: Vbb(under)  
j
5.0  
T =-40...+25°C: Vbb(u rst)  
5.0  
7.0  
j
T =+150°C:  
j
Undervoltage restart of charge pump  
see diagram page 12  
Vbb(ucp)  
--  
--  
5.6  
0.2  
7.0  
V
V
Undervoltage hysteresis  
Vbb(under) = Vbb(u rst) - Vbb(under)  
Vbb(under)  
--  
Overvoltage shutdown  
Overvoltage restart  
Overvoltage hysteresis  
Overvoltage protection7)  
Ibb=40 mA  
T =-40...+150°C: Vbb(over)  
34  
33  
--  
--  
--  
43  
--  
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)  
j
T =-40...+150°C: Vbb(over)  
j
0.5  
47  
--  
T =-40...+150°C: Vbb(AZ)  
j
42  
--  
Standby current (pin 4),  
VIN=0  
Operating current (Pin 2)8), VIN=5 V  
both channels on, Tj =-40...+150°C,  
Operating current (Pin 2)8)  
Ibb(off)  
µA  
--  
--  
90  
150  
1.2  
Tj=-40...+150°C:  
IGND  
IGND  
0.6  
mA  
mA  
--  
0.4  
0.7  
one channel on, Tj =-40...+150°C:,  
6)  
At supply voltage increase up to V = 5.6 V typ without charge pump, V  
V - 2 V  
bb  
bb  
OUT  
7)  
8)  
See also V  
in table of protection functions and circuit diagram page 8.  
ON(CL)  
Add I , if I > 0, add I , if V >5.5 V  
ST  
ST  
IN  
IN  
Semiconductor Group  
4
2003-Oct-01  

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