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BTS611L1E3128ABTMA1 PDF预览

BTS611L1E3128ABTMA1

更新时间: 2024-11-21 14:48:11
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动接口集成电路
页数 文件大小 规格书
15页 312K
描述
Buffer/Inverter Based Peripheral Driver, 2.3A, MOS, PSSO6, TO-220, 7/6 PIN

BTS611L1E3128ABTMA1 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.75Is Samacsys:N
其他特性:NOMINAL LOAD CURR FOR 2 CHA IS 4.4A; SEATED HGT-NOM; SEATED HGT-CALCULATED内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSSO-G6
JESD-609代码:e3长度:9.9 mm
功能数量:2端子数量:6
输出电流流向:SINK标称输出峰值电流:2.3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG峰值回流温度(摄氏度):NOT SPECIFIED
座面最大高度:4.6 mm最大供电电压:34 V
最小供电电压:5 V标称供电电压:12 V
表面贴装:YES技术:MOS
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:400 µs
接通时间:400 µs宽度:9.2 mm
Base Number Matches:1

BTS611L1E3128ABTMA1 数据手册

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®
PROFET  
BTS611L1  
Smart Two Channel Highside Power Switch  
Features  
Product Summary  
Overload protection  
Overvoltage protection Vbb(AZ)  
43  
V
Current limitation  
Short circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
V
5.0 ... 34 V  
both  
parallel  
Operating voltage  
bb(on)  
channels: each  
On-state resistance RON  
Load current (ISO) IL(ISO)  
200  
2.3  
4
100  
4.4  
4
mΩ  
A
1
)
Reverse battery protection  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
Current limitation  
IL(SCr)  
A
Open drain diagnostic output  
Open load detection in ON-state  
CMOS compatible input  
Loss of ground and loss of V protection  
Electrostatic discharge (ESD) protection  
TO-220AB/7  
bb  
7
7
Application  
7
1
1
µC compatible power switch with diagnostic  
feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve  
loads  
1
Straight leads  
SMD  
Standard  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.  
+ V  
bb  
4
Current  
limit 1  
Gate 1  
Voltage  
source  
Overvoltage  
protection  
protection  
V
Logic  
OUT1  
Limit for  
Level shifter  
Rectifier 1  
Voltage  
sensor  
unclamped  
ind. loads 1  
1
7
Temperature  
sensor 1  
3
6
IN1  
IN2  
Charge  
pump 1  
Open load  
Short to Vbb  
detection 1  
Logic  
ESD  
Charge  
pump 2  
5
Gate 2  
protection  
ST  
Current  
limit 2  
OUT2  
R
Level shifter  
Rectifier 2  
Limit for  
unclamped  
ind. loads 2  
Load  
Temperature  
sensor 2  
Open load  
R
O1  
O2  
Short to Vbb  
GND  
detection 2  
GND  
PROFET  
2
Signal GND  
Load GND  
1)  
With external current limit (e.g. resistor R =150 ) in GND connection, resistor in series with ST  
GND  
connection, reverse load current limited by connected load.  
Semiconductor Group  
1 of 15  
2003-Oct-01  

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