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BTS612N1E3128ABUMA1 PDF预览

BTS612N1E3128ABUMA1

更新时间: 2024-02-09 16:35:03
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动接口集成电路
页数 文件大小 规格书
14页 363K
描述
Buffer/Inverter Based Peripheral Driver, 4.4A, MOS, PSSO6, TO-263, 7/6 PIN

BTS612N1E3128ABUMA1 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active包装说明:TO-263,
Reach Compliance Code:not_compliantFactory Lead Time:18 weeks
风险等级:5.71Is Samacsys:N
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSSO-G6JESD-609代码:e3
长度:10 mm功能数量:1
端子数量:6输出电流流向:SINK
标称输出峰值电流:4.4 A封装主体材料:PLASTIC/EPOXY
封装代码:TO-263封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
筛选级别:AEC-Q100座面最大高度:4.5 mm
最大供电电压:34 V最小供电电压:5 V
标称供电电压:12 V表面贴装:YES
技术:MOS端子面层:Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
断开时间:400 µs接通时间:400 µs
宽度:9.25 mmBase Number Matches:1

BTS612N1E3128ABUMA1 数据手册

 浏览型号BTS612N1E3128ABUMA1的Datasheet PDF文件第2页浏览型号BTS612N1E3128ABUMA1的Datasheet PDF文件第3页浏览型号BTS612N1E3128ABUMA1的Datasheet PDF文件第4页浏览型号BTS612N1E3128ABUMA1的Datasheet PDF文件第5页浏览型号BTS612N1E3128ABUMA1的Datasheet PDF文件第6页浏览型号BTS612N1E3128ABUMA1的Datasheet PDF文件第7页 
®
PROFET  
BTS612N1  
Smart Two Channel High-Side Power Switch  
Product Summary  
Overvoltage protection Vbb(AZ)  
43  
V
V
5.0 ... 34 V  
Operating voltage  
bb(on)  
both  
parallel  
Features  
channels: each  
Overload protection  
On-state resistance RON  
Load current (ISO) IL(ISO)  
200  
2.3  
4
100  
m  
Current limitation  
Short circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
Reverse battery protection  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
4.4  
4
A
Current limitation  
IL(SCr)  
A
1
)
PG-TO263-7-2  
Open drain diagnostic output  
Open load detection in OFF-state  
CMOS compatible input  
Loss of ground and loss of V protection  
bb  
Electrostatic discharge (ESD) protection  
Green Product (RoHS compliant)  
AEC Qualified  
Application  
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays, fuses and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.  
+ V  
bb  
4
Current  
limit 1  
Gate 1  
protection  
Voltage  
source  
Overvoltage  
protection  
V Logic  
OUT1  
Limit for  
unclamped  
ind. loads 1  
Level shifter  
Rectifier 1  
Voltage  
sensor  
1
Temperature  
sensor 1  
3
6
IN1  
IN2  
Charge  
pump 1  
Open load  
Short to Vbb  
detection 1  
Logic  
ESD  
Charge  
pump 2  
5
ST  
Gate 2  
protection  
Current  
limit 2  
OUT2  
Level shifter  
Rectifier 2  
Limit for  
unclamped  
ind. loads 2  
7
Load  
Temperature  
sensor 2  
Open load  
Short to Vbb  
detection 2  
GND  
PROFET  
2
Signal GND  
Load GND  
1
)
With external current limit (e.g. resistor R  
=150 ) in GND connection, resistor in series with ST  
GND  
connection, reverse load current limited by connected load.  
Data Sheet  
1
2013-10-11  

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