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BTS442D2E3043 PDF预览

BTS442D2E3043

更新时间: 2024-11-21 15:28:51
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网驱动接口集成电路
页数 文件大小 规格书
14页 191K
描述
Buffer/Inverter Based Peripheral Driver, 95A, MOS, PSFM5, TO-220AB, 5 PIN

BTS442D2E3043 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:, SIP5,.1,67TB
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.08内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PSFM-T5
JESD-609代码:e0功能数量:1
端子数量:5输出电流流向:SOURCE
标称输出峰值电流:95 A封装主体材料:PLASTIC/EPOXY
封装等效代码:SIP5,.1,67TB封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
电源:4.5/42 V认证状态:Not Qualified
子类别:MOSFET Drivers最大供电电压:42 V
最小供电电压:4.5 V标称供电电压:12 V
表面贴装:NO技术:MOS
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子节距:1.7 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:130 µs
接通时间:350 µsBase Number Matches:1

BTS442D2E3043 数据手册

 浏览型号BTS442D2E3043的Datasheet PDF文件第2页浏览型号BTS442D2E3043的Datasheet PDF文件第3页浏览型号BTS442D2E3043的Datasheet PDF文件第4页浏览型号BTS442D2E3043的Datasheet PDF文件第5页浏览型号BTS442D2E3043的Datasheet PDF文件第6页浏览型号BTS442D2E3043的Datasheet PDF文件第7页 
®
PROFET BTS 442 D2  
Smart Highside Power Switch  
Features  
Product Summary  
Overload protection  
Overvoltage protection  
Vbb(AZ)  
63  
V
Current limitation  
Short-circuit protection  
Thermal shutdown  
Overvoltage protection (including load dump)  
Fast demagnetization of inductive loads  
Reverse battery protection  
Undervoltage and overvoltage shutdown with  
auto-restart and hysteresis  
V
4.5 ... 42 V  
Operating voltage  
On-state resistance  
Load current (ISO)  
Current limitation  
bb(on)  
R
18  
21  
70  
m  
A
ON  
I
I
L(ISO)  
L(SCr)  
A
1
)
TO-220AB/5  
CMOS diagnostic output  
Open load detection in ON-state  
CMOS compatible input  
Loss of ground and loss of V protection  
2)  
5
5
bb  
Electrostatic discharge (ESD) protection  
5
1
1
Straight leads  
Standard  
SMD  
Application  
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  
All types of resistive, inductive and capacitve loads  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection  
functions.  
+ V  
R
bb  
bb  
3
5
Voltage  
source  
Gate  
Overvoltage  
protection  
Current  
limit  
protection  
VLogic  
OUT  
Limit for  
unclamped  
ind. loads  
Charge pump  
Level shifter  
Voltage  
sensor  
Temperature  
sensor  
Rectifier  
IN  
2
4
Open load  
detection  
Load  
Logic  
ESD  
ST  
Short circuit  
detection  
PROFET  
GND  
1
Load GND  
Signal GND  
1)  
2)  
No external components required, reverse load current limited by connected load.  
Additional external diode required for charged inductive loads  
Semiconductor Group  
Page 1 of 14  
1999-Mar.-22  

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