Datasheet > BTS442E2_99

BTS442E2_99

更新时间： 2024-11-18 03:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		开关电源开关
页数	文件大小	规格书
14页	306K
描述
Smart Highside Power Switch

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中文翻译

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数据手册

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BTS442E2_99 数据手册

PROFET^®BTS 442 E2

Smart Highside Power Switch

Features

Product Summary

•

Overload protection

Overvoltage protection

V_bb(AZ)

Current limitation

Short-circuit protection

Thermal shutdown

Overvoltage protection (including load dump)

Fast demagnetization of inductive loads

Reverse battery protection

Undervoltage and overvoltage shutdown with

auto-restart and hysteresis

4.5 ... 42 V

Operating voltage

On-state resistance

Load current (ISO)

Current limitation

bb(on)

mΩ

L(ISO)

L(SCr)

)

TO-220AB/5

•

Open drain diagnostic output

Open load detection in ON-state

CMOS compatible input

Loss of ground and loss of V protection

Electrostatic discharge (ESD) protection

SMD

Straight leads

Standard

Application

•

µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads

All types of resistive, inductive and capacitve loads

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic

feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection

functions.

+ V

Voltage

source

Gate

Overvoltage

protection

Current

limit

protection

V_Logic

OUT

Limit for

unclamped

ind. loads

Charge pump

Level shifter

Voltage

sensor

Temperature

sensor

Rectifier

Open load

detection

Load

Logic

ESD

Short circuit

detection

PROFET

GND

Load GND

Signal GND

No external components required, reverse load current limited by connected load.

Additional external diode required for charged inductive loads

Infineon Technologies AG

22.03.99

12 3 4 5 6 7...14

中文翻译

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