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BTS452TATMA1 PDF预览

BTS452TATMA1

更新时间: 2024-11-18 14:48:11
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动接口集成电路
页数 文件大小 规格书
18页 244K
描述
Buffer/Inverter Based Peripheral Driver, 2.2A, MOS, PSSO4, PLASTIC, TO-252, 5 PIN

BTS452TATMA1 技术参数

是否无铅:含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-252
包装说明:TO-252,针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:10 weeks 5 days
风险等级:1.57Is Samacsys:N
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSSO-G4JESD-609代码:e3
长度:6.5 mm湿度敏感等级:1
功能数量:1端子数量:4
输出电流流向:SINK标称输出峰值电流:2.2 A
封装主体材料:PLASTIC/EPOXY封装代码:TO-252
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:2.5 mm最大供电电压:52 V
最小供电电压:6 V标称供电电压:12 V
表面贴装:YES技术:MOS
端子面层:Tin (Sn)端子形式:GULL WING
端子节距:1.14 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:200 µs
接通时间:180 µs宽度:6.22 mm
Base Number Matches:1

BTS452TATMA1 数据手册

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Smart High-Side Power Switch  
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• AEC qualified  
• Green product (RoHS compliant)  
Application  
All types of resistive, inductive and capacitive loads  
µC compatible power switch for 12 V, 24 V and 42 V DC applications  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,  
monolithically integrated in Smart SIPMOS technology.  
Providing embedded protective functions.  
Data Sheet  
1
V1.1, 2007-05-29  

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