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BTS452T

更新时间: 2024-11-17 22:48:35
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
16页 306K
描述
Smart Power High-Side-Switch

BTS452T 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-252
包装说明:PLASTIC, TO-252, 5 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:0.99
Samacsys Description:1.8A Smart High-Side Power Switch TO252 Infineon BTS452T Intelligent Power Switch, High Side, 2.2A, 52V, 5-Pin, TO-252内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE
驱动器位数:1接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码:R-PSSO-G4JESD-609代码:e3
长度:6.5 mm功能数量:1
端子数量:4输出电流流向:SINK
最大输出电流:1.8 A标称输出峰值电流:2.2 A
封装主体材料:PLASTIC/EPOXY封装代码:TO-252
封装等效代码:SMSIP5H,.37,50TB封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
电源:12/24 V认证状态:Not Qualified
筛选级别:AEC-Q100座面最大高度:2.5 mm
子类别:Peripheral Drivers最大供电电压:52 V
最小供电电压:6 V标称供电电压:12 V
表面贴装:YES技术:MOS
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.14 mm端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED断开时间:200 µs
接通时间:180 µs宽度:6.22 mm

BTS452T 数据手册

 浏览型号BTS452T的Datasheet PDF文件第2页浏览型号BTS452T的Datasheet PDF文件第3页浏览型号BTS452T的Datasheet PDF文件第4页浏览型号BTS452T的Datasheet PDF文件第5页浏览型号BTS452T的Datasheet PDF文件第6页浏览型号BTS452T的Datasheet PDF文件第7页 
BTS 452 T  
Smart Power High-Side-Switch  
Features  
Product Summary  
Overload protection  
Current limitation  
Overvoltage protection  
Operating voltage  
V
V
62  
6...52 V  
V
bb(AZ)  
bb(on)  
Short circuit protection  
Thermal shutdown with restart  
Overvoltage protection  
(including load dump)  
On-state resistance  
Nominal load current  
R
200 mΩ  
ON  
I
1.8  
A
L(ISO)  
Fast demagnetization of inductive loads  
Reverse battery protection  
with external resistor  
CMOS compatible input  
Loss of GND and loss of V protection  
ESD - Protection  
bb  
P-TO252-5-11  
Very low standby current  
Application  
All types of resistive, inductive and capacitive loads  
µC compatible power switch for 12 V, 24 V and 42 V DC applications  
Replaces electromechanical relays and discrete circuits  
General Description  
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,  
monolithically integrated in Smart SIPMOS technology.  
Providing embedded protective functions.  
2004-01-27  
Page 1  

BTS452T 替代型号

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