Datasheet > BTC12-400

BTC12-400

更新时间： 2024-11-02 01:15:11

品牌	Logo	应用领域
DIGITRON		/
页数	文件大小	规格书
4页	688K
描述
SILICON BIDIRECTIONAL THYRISTORS

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BTC12-400 数据手册

D I G I T R O N S E M I C O N D U C T O R S

BTC12 SERIES

SILICON BIDIRECTIONAL THYRISTORS

Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).

Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive off-state voltage⁽¹⁾

(T_J= 125°C)

BTC12-200

V_DRM

200

400

600

Volts

BTC12-400

BTC12-600

RMS on-state current (T_C= 70°C)

I_T(RMS)

Amps

Peak non-repetitive surge current

(1 cycle, 50 Hz, t = 20ms)

I_TSM

(1/2 cycle, 50Hz, t = 10ms)

100

Circuit fusing considerations (T_J= -40 to 125°C , t = 10ms)

Peak gate power (pulse width = 2.0µs)

Average gate power (t = 10ms)

I²t

P_GM

P_G(AV)

I_GM

A²s

Watts

Amps

°C

0.35

Peak gate current (pulse width = 1.0µs)

Operating junction temperature range

Storage temperature range

4.0

T_J

-40 to +125

-40 to +150

T_stg

°C

Maximum rate of change of on-state current

di/dt

A/µs

(I_TM= 12A, I_G= 200mA)

Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the

rated blocking voltage.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Maximum

Unit

Thermal resistance, junction to case

R_ӨJC

2.2

°C/W

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ.

Max

2.0

Unit

Peak blocking current (either direction)

I_DRM

(Rated V_DRM@ T_J= 125°C, gate open)

Peak on-state voltage (either direction)

V_TM

V_GTM

I_H

Volts

(I_TM= 17A peak)

1.4

1.65

Peak gate trigger voltage

(main terminal voltage = 12V, R_L= 100Ω)

All quadrants

2.5

(main terminal voltage = rated V_DRM, R_L= 1kΩ, T_J= 125°C)

All quadrants

0.2

Holding current (either direction)

(main terminal voltage= 12V, gate open, initiating current = 1.0A, T_C= 25°C)

Latching current

(main terminal voltage = 24V, gate trigger source = 15V, 100Ω)

MT2(+), G(+)

MT2(-), G(-)

MT2(+), G(-)

I_L

100

200

Critical rate of rise of off state voltage

dv/dt

V/µs

(Rated V_DRM, exponential voltage rise, gate open, T_J= 125°C)

100

Blocking voltage application rate

dv/dt(c)

(@ T_C= 80°C @ V_DRM, I_T= 6A, gate open, commutation di/dt = 4.3A/ms)

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

144 Market Street

Kenilworth NJ 07033 USA

Rev. 20130204

12 3 4

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