Datasheet > BTC1815A3

BTC1815A3

更新时间： 2024-11-06 03:23:03

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	156K
描述
General Purpose NPN Epitaxial Planar Transistor

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数据手册

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BTC1815A3 数据手册

Spec. No. : C204A3-T

Issued Date : 2003.08.26

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

General Purpose NPN Epitaxial Planar Transistor

BTC1815A3

Description

The BTC1815A3 is designed for use in driver stage of AF amplifier and low speed switching.

Features

• High voltage and high current : V_CEO=50V(min), I_C=150mA(max)

• High H_FEand excellent linearity

• Complementary to BTA1015A3

Symbol

Outline

BTC1815A3

TO-92

B：Base

C：Collector

E：Emitter

E C B

Limits

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

150

°C/W

°C

Base Current

I^B

Power Dissipation @Ta=25℃

400

Thermal Resistance, Junction to Ambient

Junction Temperature

R^θJA

250

125

Storage Temperature

Tstg

-55~+125

°C

BTC1815A3

CYStek Product Specification

12 3 4

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