Datasheet > BTC2383A3

BTC2383A3

更新时间： 2024-11-09 09:01:15

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
9页	219K
描述
General Purpose NPN Epitaxial Planar Transistor

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数据手册

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BTC2383A3 数据手册

Spec. No. : C316

Issued Date : 2005.12.21

Revised Date : 2006.03.17

Page No. : 1/9

CYStech Electronics Corp.

General Purpose NPN Epitaxial Planar Transistor

BTC2383A3

Features

• High breakdown voltage, BV_CEO≥ 200V

• Large continuous collector current capability

• Low collector saturation voltage

• Complementary to BTA1013A3

• Pb-free package

Symbol

Outline

BTC2383A3

TO-92

B：Base

C：Collector

E：Emitter

E C B

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

VCBO

VCEO

VEBO

280

200

°C

Base Current

0.5

Power Dissipation

Junction Temperature

Storage Temperature

900

150

Tstg

-55~+150

BTC2383A3

CYStek Product Specification

12 3 4 5 6 7...9

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