Datasheet > BTC2881J3-Y-T3-G

BTC2881J3-Y-T3-G

更新时间： 2024-11-10 01:15:35

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
7页	292K
描述
General Purpose NPN Epitaxial Planar Transistor

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数据手册

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BTC2881J3-Y-T3-G 数据手册

Spec. No. : C316J3

Issued Date : 2009.11.17

Revised Date : 2010.12.08

Page No. : 1/7

CYStech Electronics Corp.

General Purpose NPN Epitaxial Planar Transistor

BVCEO

RCESAT(MAX)

200V

0.86Ω

BTC2881J3

Features

• High breakdown voltage, BV_CEO≥ 200V

• Large continuous collector current capability

• Low collector saturation voltage

• Pb-free lead plating and halogen-free package

Symbol

Outline

TO-252(DPAK)

BTC2881J3

B：Base

B C E

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Power Dissipation @TA=25℃

VCBO

VCEO

VEBO

300

200

0.2

Power Dissipation @TC=25℃

Operating Junction and Storage Temperature Range

Tj ; Tstg

150

°C

BTC2881J3

CYStek Product Specification

12 3 4 5 6 7

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