Datasheet > BTC1510F3

BTC1510F3

更新时间： 2024-11-05 03:23:03

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	140K
描述
NPN Epitaxial Planar Transistor

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中文翻译

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数据手册

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BTC1510F3 数据手册

Spec. No. : C652F3

Issued Date : 2004.09.07

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

NPN Epitaxial Planar Transistor

BTC1510F3

Description

The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

switching application.

Features:

•High BVCEO

•Low VCE(SAT)

•High current gain

•Monolithic construction with built-in base-emitter shunt resistors

Equivalent Circuit

Outline

BTC1510F3

TO-263

R1 8k

R2 120

B：Base

B C E

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(Pulse)

Limits

150

Unit

Collector Current

Pd(T^A=25℃)

Pd(T^C=25℃)

150

Power Dissipation

Junction Temperature

Storage Temperature

Note : *1. Single Pulse Pw=100ms

°C

Tstg

-55~+150

BTC1510F3

CYStek Product Specification

12 3 4

中文翻译

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