D I G I T R O N S E M I C O N D U C T O R S
BTC12 SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(TJ = 125°C)
BTC12-200
VDRM
200
400
600
Volts
BTC12-400
BTC12-600
RMS on-state current (TC = 70°C)
IT(RMS)
12
Amps
Amps
Peak non-repetitive surge current
(1 cycle, 50 Hz, t = 20ms)
ITSM
90
(1/2 cycle, 50Hz, t = 10ms)
100
Circuit fusing considerations (TJ = -40 to 125°C , t = 10ms)
Peak gate power (pulse width = 2.0µs)
Average gate power (t = 10ms)
I2t
PGM
PG(AV)
IGM
40
16
A2s
Watts
Watts
Amps
°C
0.35
Peak gate current (pulse width = 1.0µs)
Operating junction temperature range
Storage temperature range
4.0
TJ
-40 to +125
-40 to +150
Tstg
°C
Maximum rate of change of on-state current
di/dt
A/µs
(ITM = 12A, IG = 200mA)
10
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the
rated blocking voltage.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum
Unit
Thermal resistance, junction to case
RӨJC
2.2
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ.
-
Max
2.0
Unit
Peak blocking current (either direction)
IDRM
mA
(Rated VDRM @ TJ = 125°C, gate open)
-
-
Peak on-state voltage (either direction)
VTM
VGTM
IH
Volts
Volts
mA
(ITM = 17A peak)
1.4
1.65
Peak gate trigger voltage
(main terminal voltage = 12V, RL = 100Ω)
All quadrants
-
-
-
2.5
-
(main terminal voltage = rated VDRM, RL = 1kΩ, TJ = 125°C)
All quadrants
0.2
Holding current (either direction)
(main terminal voltage= 12V, gate open, initiating current = 1.0A, TC = 25°C)
-
-
50
Latching current
(main terminal voltage = 24V, gate trigger source = 15V, 100Ω)
MT2(+), G(+)
MT2(-), G(-)
MT2(+), G(-)
IL
-
-
-
-
-
-
100
100
200
mA
Critical rate of rise of off state voltage
dv/dt
V/µs
V/µs
(Rated VDRM, exponential voltage rise, gate open, TJ = 125°C)
100
5
-
-
-
-
Blocking voltage application rate
dv/dt(c)
(@ TC = 80°C @ VDRM, IT = 6A, gate open, commutation di/dt = 4.3A/ms)
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130204