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BTC12

更新时间: 2024-11-02 01:15:11
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DIGITRON /
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SILICON BIDIRECTIONAL THYRISTORS

BTC12 数据手册

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D I G I T R O N S E M I C O N D U C T O R S  
BTC12 SERIES  
SILICON BIDIRECTIONAL THYRISTORS  
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak repetitive off-state voltage(1)  
(TJ = 125°C)  
BTC12-200  
VDRM  
200  
400  
600  
Volts  
BTC12-400  
BTC12-600  
RMS on-state current (TC = 70°C)  
IT(RMS)  
12  
Amps  
Amps  
Peak non-repetitive surge current  
(1 cycle, 50 Hz, t = 20ms)  
ITSM  
90  
(1/2 cycle, 50Hz, t = 10ms)  
100  
Circuit fusing considerations (TJ = -40 to 125°C , t = 10ms)  
Peak gate power (pulse width = 2.0µs)  
Average gate power (t = 10ms)  
I2t  
PGM  
PG(AV)  
IGM  
40  
16  
A2s  
Watts  
Watts  
Amps  
°C  
0.35  
Peak gate current (pulse width = 1.0µs)  
Operating junction temperature range  
Storage temperature range  
4.0  
TJ  
-40 to +125  
-40 to +150  
Tstg  
°C  
Maximum rate of change of on-state current  
di/dt  
A/µs  
(ITM = 12A, IG = 200mA)  
10  
Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the  
rated blocking voltage.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Maximum  
Unit  
Thermal resistance, junction to case  
RӨJC  
2.2  
°C/W  
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ.  
-
Max  
2.0  
Unit  
Peak blocking current (either direction)  
IDRM  
mA  
(Rated VDRM @ TJ = 125°C, gate open)  
-
-
Peak on-state voltage (either direction)  
VTM  
VGTM  
IH  
Volts  
Volts  
mA  
(ITM = 17A peak)  
1.4  
1.65  
Peak gate trigger voltage  
(main terminal voltage = 12V, RL = 100)  
All quadrants  
-
-
-
2.5  
-
(main terminal voltage = rated VDRM, RL = 1k, TJ = 125°C)  
All quadrants  
0.2  
Holding current (either direction)  
(main terminal voltage= 12V, gate open, initiating current = 1.0A, TC = 25°C)  
-
-
50  
Latching current  
(main terminal voltage = 24V, gate trigger source = 15V, 100)  
MT2(+), G(+)  
MT2(-), G(-)  
MT2(+), G(-)  
IL  
-
-
-
-
-
-
100  
100  
200  
mA  
Critical rate of rise of off state voltage  
dv/dt  
V/µs  
V/µs  
(Rated VDRM, exponential voltage rise, gate open, TJ = 125°C)  
100  
5
-
-
-
-
Blocking voltage application rate  
dv/dt(c)  
(@ TC = 80°C @ VDRM, IT = 6A, gate open, commutation di/dt = 4.3A/ms)  
phone +1.908.245-7200  
fax +1.908.245-0555  
sales@digitroncorp.com  
www.digitroncorp.com  
144 Market Street  
Kenilworth NJ 07033 USA  
Rev. 20130204  

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SILICON BIDIRECTIONAL THYRISTORS