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BTA316-600ET PDF预览

BTA316-600ET

更新时间: 2024-02-17 20:07:38
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
13页 202K
描述
16 A three-quadrant high commutation triac

BTA316-600ET 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.56
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大均方根通态电流:16 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BTA316-600ET 数据手册

 浏览型号BTA316-600ET的Datasheet PDF文件第1页浏览型号BTA316-600ET的Datasheet PDF文件第2页浏览型号BTA316-600ET的Datasheet PDF文件第4页浏览型号BTA316-600ET的Datasheet PDF文件第5页浏览型号BTA316-600ET的Datasheet PDF文件第6页浏览型号BTA316-600ET的Datasheet PDF文件第7页 
BTA316-600ET  
NXP Semiconductors  
16 A three-quadrant high commutation triac  
003aab685  
003aab777  
60  
20  
IT(RMS)  
(A)  
16  
IT(RMS)  
(A)  
50  
40  
30  
20  
10  
0
12  
8
4
0
-50  
10-2  
10-1  
1
10  
0
50  
100  
150  
mb (°C)  
T
surge duration (s)  
Fig 1. RMS on-state current as a function of surge  
duration; maximum values  
Fig 2. RMS on-state current as a function of mounting  
base temperature; maximum values  
003aab689  
20  
conduction form  
α= 180°  
Ptot  
(W)  
angle,  
(degrees)  
factor  
a
120°  
90°  
30  
60  
90  
120  
180  
4
15  
10  
5
2.8  
2.2  
1.9  
1.57  
α
60°  
30°  
0
0
2
4
6
8
10  
12  
14  
16  
IT(RMS) (A)  
Fig 3. Total power dissipation as a function of RMS on-state current; maximum values  
BTA316-600ET_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 30 March 2010  
3 of 13  

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