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BTA316-600ET PDF预览

BTA316-600ET

更新时间: 2024-01-22 03:49:01
品牌 Logo 应用领域
恩智浦 - NXP 可控硅
页数 文件大小 规格书
13页 202K
描述
16 A three-quadrant high commutation triac

BTA316-600ET 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.56
其他特性:SENSITIVE GATE外壳连接:MAIN TERMINAL 2
配置:SINGLEJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大均方根通态电流:16 A
参考标准:IEC-60134断态重复峰值电压:600 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

BTA316-600ET 数据手册

 浏览型号BTA316-600ET的Datasheet PDF文件第1页浏览型号BTA316-600ET的Datasheet PDF文件第3页浏览型号BTA316-600ET的Datasheet PDF文件第4页浏览型号BTA316-600ET的Datasheet PDF文件第5页浏览型号BTA316-600ET的Datasheet PDF文件第6页浏览型号BTA316-600ET的Datasheet PDF文件第7页 
BTA316-600ET  
NXP Semiconductors  
16 A three-quadrant high commutation triac  
2. Pinning information  
Table 2.  
Pinning information  
Pin  
1
Symbol Description  
Simplified outline  
Graphic symbol  
T1  
T2  
G
main terminal 1  
main terminal 2  
gate  
mb  
T2  
T1  
G
2
3
sym051  
mb  
T2  
mounting base; main terminal 2  
1
2 3  
SOT78 (TO-220AB)  
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BTA316-600ET  
TO-220AB  
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78  
TO-220AB  
4. Limiting values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
VDRM  
repetitive peak off-state  
voltage  
-
600  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb 126 °C; see Figure 3, 1 and 2  
-
-
16  
A
A
non-repetitive peak  
on-state current  
full sine wave; Tj(init) = 25 °C; tp = 20 ms; see Figure 4  
and 5  
140  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
tp = 10 ms; sine-wave pulse  
-
-
-
150  
98  
A
A2s  
I2t  
I2t for fusing  
dIT/dt  
rate of rise of on-state IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs  
current  
100  
A/µs  
IGM  
peak gate current  
peak gate power  
-
2
A
PGM  
PG(AV)  
Tstg  
Tj  
-
5
W
W
°C  
°C  
average gate power  
storage temperature  
junction temperature  
over any 20 ms period  
-
0.5  
150  
150  
-40  
-
BTA316-600ET_1  
All information provided in this document is subject to legal disclaimers.  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 01 — 30 March 2010  
2 of 13  

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