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BTA316-800B0

更新时间: 2024-11-20 17:01:19
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 486K
描述
Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package inte

BTA316-800B0 技术参数

生命周期:Active包装说明:PLASTIC, SC-46, 3 PIN
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.72其他特性:SENSITIVE GATE
外壳连接:MAIN TERMINAL 2配置:SINGLE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大均方根通态电流:16 A
断态重复峰值电压:800 V表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

BTA316-800B0 数据手册

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BTA316-800B0  
3Q Hi-Com Triac  
Rev.02 - 14 September 2021  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a TO220 plastic package intended for  
use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B0" triac  
will commutate the full RMS current at the maximum rated junction temperature without the aid of  
a snubber.  
2. Features and benefits  
3Q technology for improved noise immunity  
High immunity to false turn-on by dV/dt  
High minimum IGT for guaranteed immunity to gate noise  
High voltage capability  
Least sensitive gate for highest noise immunity  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
Very high commutation capability with maximum false trigger immunity  
3. Applications  
Electronic thermostats (heating and cooling)  
High power motor controls e.g. washing machines and vacuum cleaners  
Rectifier-fed DC inductive loads e.g. DC motors and solenoids  
Refrigeration and air conditioning compressors  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
-
-
-
-
800  
16  
V
A
A
RMS on-state current  
full sine wave; Tmb ≤ 101 °C; Fig. 1;  
Fig. 2; Fig. 3  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
140  
state current  
Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
150  
125  
Max  
A
Tj  
junction temperature  
-
-
°C  
Symbol Parameter  
Static characteristics  
Conditions  
Min  
Typ  
Unit  
IGT  
gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
10  
10  
10  
-
-
-
50  
50  
50  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  

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