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BTA316-800ET PDF预览

BTA316-800ET

更新时间: 2024-04-09 19:01:24
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 490K
描述
Planar passivated high commutation three quadrant triac in a SOT78 plastic package. The "series ET

BTA316-800ET 数据手册

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BTA316-800ET  
3Q Hi-Com Triac  
Rev.02 - 10 September 2021  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a TO220 plastic package. The  
"series ET" triac balances the requirements of commutation performance and gate sensitivity.  
The "sensitive gate" "series ET" is intended for interfacing with low power drivers including  
microcontrollers where "high junction operating temperature" capability is required.  
2. Features and benefits  
3Q technology for improved noise immunity  
Direct interfacing with low power drivers and microcontrollers  
Good immunity to false turn-on by dV/dt  
High commutation capability with sensitive gate  
High junction operating temperature capability  
High voltage capability  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
3. Applications  
Applications subject to high temperature  
Electronic thermostats (heating and cooling)  
High power motor controls e.g. washing machines and vacuum cleaners  
Refrigeration and air-conditioner compressor controls  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
-
-
-
-
800  
16  
V
A
A
RMS on-state current  
full sine wave; Tmb ≤ 126 °C; Fig. 1;  
Fig. 2; Fig. 3  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
140  
state current  
Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
150  
150  
Max  
A
Tj  
junction temperature  
-
-
°C  
Symbol Parameter  
Static characteristics  
Conditions  
Min  
Typ  
Unit  
IGT  
gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
-
-
-
-
10  
10  
10  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  

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